Understanding Coulomb Effects in Nanoscale Schottky-Barrier-FETs
نویسندگان
چکیده
منابع مشابه
Improved modeling of Coulomb effects in nanoscale Schottky-barrier FETs
We employ a novel multi-configurational selfconsistent Green’s function approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect transistors. This approach allows to calculate the electronic transport with a seamless transition from the single-electron regime to room temperature field-effect transistor operation. The particular improvement of the MCSCG stems from a divisio...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2007
ISSN: 0018-9383
DOI: 10.1109/ted.2007.895235